Laser machining method and apparatus

专利摘要:
In the laser processing method for removing residual defects on the photomask, there are problems to be solved in which the portion of the substrate from which the defects have been removed is damaged and the quality of processing is degraded. In the method for removing residual defects on the photomask by the method of laser processing, the residual defects are composed of halogenated hydrocarbon gases (e.g. ethyl iodide) and a structure where the surface on which the irradiation with the laser beam is processed is directed downwards from below. Can be removed using irradiation of a laser beam in an atmosphere comprising
公开号:KR20040012454A
申请号:KR1020030032181
申请日:2003-05-21
公开日:2004-02-11
发明作者:모리시게유끼오
申请人:닛본 덴끼 가부시끼가이샤；
IPC主号:

专利说明:

Laser processing method and apparatus {LASER MACHINING METHOD AND APPARATUS}
[13] The present invention relates to a method of laser processing for correcting a pattern defect on a photomask and a liquid crystal substrate and a laser processing apparatus using the method.
[14] One of the prior art laser processing apparatuses for correcting defects on photomasks and liquid crystal substrates is disclosed in Japanese Patent Laid-Open No. 2002-62637. In the method for pattern defect correction disclosed in this application, the substrate is directed downward and irradiated with a laser beam to remove defects on the substrate by laser vaporization. In this disclosed method, the substrate surface can be observed without the resolution of the optical system for viewing the substrate surface while the substrate surface is irradiated with a laser beam. In addition, since the fine particles generated by laser vaporization can be lowered by gravity, a high precision pattern can be molded, and the amount of fine particles refixed on the substrate can be limited to a minimum.
[15] In addition, the laser processing apparatus according to the domestic publication of International Patent Application No. 1989-502149 (PCT / US / 87/03488) has a gas accommodating portion having an inlet port and an ejection port of a concentric circular gas like a donut. This shape allows for local blowing of gas on the substrate, switching of the gas, and switching of the direction of intake and blowing of the gas. Thus, one apparatus can perform both the formation of the pattern film by laser CVD and the removal of the pattern film by laser vaporization.
[16] However, in the laser calibration method using the conventional laser vaporization method, the pattern film to be removed is immediately heated to a high temperature of several thousand degrees Celsius, which means that even if the substrate is a high temperature resistant substrate such as quartz, the pattern film adheres. This creates a problem of making holes in the substrate. For example, in the case of a Cr mask for a semiconductor process, damage of about 10 nm depth can be generated on the substrate surface by laser irradiation even when processing conditions such as laser power and pulse duration are optimized. For this reason, when this mask is used in an actual exposure process, damage may cause a phase change of light for exposure, resulting in a developed pattern width that is different from a predetermined width. In order to reduce the depth of damage, the laser power for correcting the patterns can be lowered compared to the optimum conditions, but this causes a problem of degrading the linearity of the edge portion of the laser beam-machined portion.
[17] To solve these problems, a method has been devised for etching in which the pattern is removed by irradiation with a laser beam in an atmosphere of etching gas. However, in the case of photomasks using chromium, which is generally chemically and thermally high resistant as the pattern material, it is not suitable for pattern correction operations, such as the ability to produce reaction products with easy operation, proper reaction rate and high vapor pressure. No etching gas has been proposed that satisfies the requirements for use.
[18] Further, as disclosed in the domestic publication of International Patent Application No. 1989-502149 (PCT / US / 87/03488), in order to efficiently provide a local atmosphere of the source gas, locally blowing the gas on the substrate window. The gas receiver for the should have an inlet port and a blowout port provided around the laser irradiation part concentrically and symmetrically about the center. However, it is very difficult to construct such a dual gas flow path concentrically arranged around the laser irradiation part in the gas receiver within a range of a general gap distance determined by the operating range of the objective lens only about 1 mm. Thus, this leads to problems of high manufacturing cost and low structural production of the gas receiver. In high precision laser processing apparatus, the high resolution of the apparatus requires a short working range, so it is no longer possible to make space for the gas receiver. This causes a problem that the high precision processing apparatus cannot have such a gas window.
[19] In addition, in the case where concentric ejection and suction ports of the gas are provided in the gas receiving portion, in order to increase the concentration of the source gas in the processed portion and to reduce adhesion of the fine particles generated in the processed portion to the substrate. The source gas may be ejected from a small diameter nozzle so that the source gas has a high flow rate in the irradiation portion. In this case, the gas shielding effect of the blowing port is broken, resulting in problems such as leakage of source gas to the periphery, mixing of air, and the like.
[20] The present invention has been carried out in view of these problems. An object of the present invention is to provide a laser processing method and a laser processing apparatus capable of correcting one or both of transparent defects and opaque defects, whereby defects can be removed and processed with a laser low enough so as not to cause deformation in the substrate. A new etching gas and a gas window having a gas shielding function for locally and efficiently forming an atmosphere of the etching source gas on the surface to be processed.
[21] In order to solve the above-mentioned problems, the present invention is characterized in that the source gas is a gas containing a halogenated hydrocarbon and the surface to be processed is directed downward, irradiating the substrate with a laser beam in the atmosphere of the source gas, thereby providing a predetermined portion on the substrate. It provides a laser processing method for removing the.
[22] In addition, the laser processing method is characterized in that the halogenated hydrocarbon is a mixture formed by a combination of a halogen group of any one of iodide, chlorine and bromine, and a halogen group of any one of a methyl group, an ethyl group and a propane group. The substrate is a chrome mask substrate.
[23] Another object according to the invention is a chamberless laser processing apparatus, comprising a laser irradiation and observation system for performing optical observation and irradiation with the laser on a portion to be machined on a substrate held on a TY positioning stage, A gas reservoir for forming a local atmosphere of a CVD source gas or a local atmosphere of an etch source gas with a small gap formed between a surface and a gas receiver not in contact with the surface to be processed on the substrate; And a source gas supply and exhaust unit for supplying the source gas to the gas receiver and exhausting the source gas from the gas receiver, wherein the substrate has the surface to be processed downward and the laser Irradiation and observation optical systems are imaged on a predetermined portion of the substrate from below. Arranged to perform the irradiation by a laser beam and the aesthetic observation, wherein the gas receiving portion is a nozzle for blowing the source gas on a laser beam irradiation position of a processed portion on the substrate, between a center in a horizontal plane and the nozzle A crescent-type inlet port having a central portion of the opening positioned symmetrically with the nozzle with respect to the laser irradiation portion positioned at and an amount of purge gas ejected from the opening portion adjacent to the inlet port is adjacent to the nozzle. And a toroidal purge gas blowing port having opening widths varied to be greater than the amount of purge gas blowing out from the opening portion.
[24] Still another object according to the present invention is a chamberless laser processing apparatus, comprising: a laser irradiation and observation system for performing optical observation and irradiation with the laser on a portion to be processed on a substrate held on a TY positioning stage; A number of gases for forming a local atmosphere of a CVD source gas or a local atmosphere of an etch source gas having a small gap formed between the surface to be processed and the gas receiving portion not in contact with the surface to be processed on the substrate. And a source gas supply and exhaust unit for supplying said source gas to said gas containing portion and exhausting the source gas from said gas containing portion, said substrate having said surface to be processed facing upwards, said A laser irradiation and observation optical system is imaged from above on a portion of the substrate. Arranged to perform the irradiation by a laser beam and the aesthetic observation, wherein the gas receiving portion is a nozzle for blowing the source gas on a laser beam irradiation position of a processed portion on the substrate, between a center in a horizontal plane and the nozzle A crescent-type inlet port having a central portion of the opening positioned symmetrically with the nozzle with respect to the laser irradiation portion positioned at and an amount of purge gas ejected from the opening portion adjacent to the inlet port is adjacent to the nozzle. And a toroidal purge gas blowing port having opening widths varied to be greater than the amount of purge gas blowing out from the opening portion.
[25] Further, in the two laser processing apparatuses, the amount of purge gas ejected from the portion of the purge gas ejection port adjacent to the inlet port is 1.5 to 3.5 times more than the purge gas ejected from the portion of the purge gas ejection port adjacent to the nozzle. The etching gas is a source gas containing a halogenated hydrocarbon formed by a combination of a halogen group of any one of iodide, chlorine and bromine, and a halogen group of any one of methyl, ethyl and propane groups, and the substrate is a chrome mask substrate. In addition, the source gas supply and exhaust unit is characterized in that it includes a mechanism for switching between the etch source gas and the CVD source gas depending on the type of defect to be corrected.
[26] The present invention provides a laser processing method using a halogenated hydrocarbon represented by ethyl iodide such as etching gas and a configuration in which the etched surface of the substrate is directed downward. As a result, this method has a high level of safety in terms of corrosiveness, toxicity and flammability, so that complicated and expensive parts do not have to be used, thus reducing the cost and maintenance cost of introducing the device. In addition, in terms of processing quality, this method can provide high quality calibration where the damage in the substrate is limited to an extremely small degree and no bumps are formed on the edges of the machined parts.
[27] In addition, applying the structure of the gas receiving portion according to the present invention to laser etching processing and laser CVD processing can reduce the manufacturing cost of the device, and by increasing the upper limit of the flow rate of the source gas allowed in the laser beam irradiation portion, Processing conditions can be optimized over a wide range, and the gap distance between the gas containment and the substrate can also be much wider than conventional methods, greatly reducing the chance of accidentally scratching the surface being processed. In addition, the present invention provides a very useful laser processing apparatus.
[28] The above and other objects, features and advantages of the present invention will become apparent from the following detailed description taken in conjunction with the accompanying drawings.
[1] 1 is a schematic view showing the arrangement of a first embodiment of a laser machining apparatus according to the present invention;
[2] 2 is a schematic view showing a configuration of a gas storage portion according to the present invention.
[3] Fig. 3 is a schematic diagram showing the construction of a second embodiment of the present invention.
[4] <Explanation of symbols for the main parts of the drawings>
[5] 1: substrate
[6] 3: gas storage
[7] 4: objective lens
[8] 5: laser irradiation and observation optical system
[9] 9: X-Y positioning stage
[10] 13: blowout port
[11] 14: jet nozzle
[12] 15: inlet port
[29] 1 is a schematic diagram showing the configuration of one embodiment, and shows the configuration of the apparatus when the present invention is applied to the correction of transparent defects and opacity on the semiconductor photomask.
[30] In this configuration, the substrate 1 comprising the photomask having the surface 2 processed downward is held by the vacuum chuck 10 provided on the X-Y positioning stage 9.
[31] The observation of the pattern on the lower surface of the substrate 1 and the irradiation of the lower surface by the laser beam are performed by the laser irradiation and observation optical system having the objective lens 4 at its end according to the movement of the XY positioning stage 9 ( 5) is performed using.
[32] A gas receiver 3 for guiding the laser beam and for injecting and evacuating the source gas is arranged between the laser irradiation and observation optical system 5 and the substrate 1. The objective lens 4 is integrally formed with the gas storage part 3. In addition, the source gas piping 7 and the purification gas piping 6 for supplying the source gas and the purification gas from the gas supply and exhaust unit 11, respectively, and the exhaust gas piping 8 for sucking exhaust gas are gas It is connected to the accommodating part 3. In addition, the pressure difference sensor 19 is arranged at the base of the purge gas ejection port 13 of the window section so that the gap distance between the substrate 1 and the gas accommodating part 3 can be inspected.
[33] The control unit 12 switches the laser emission timing, the observation magnification and the illuminance for the laser irradiation and observation optical system 5, the focus position-adjusting mechanism, the moving operation of the XY positioning stage 9 and the switching of the source gas. Control work lights.
[34] Ethyl iodide gas is used as the etching gas with argon gas used as the carrier gas. Conventionally, only one of the reactions of the highly reactive halogen gas, such as fluorine and chlorine or the plasma reaction, with the inert material at high temperatures has been used in the method for the gas etching of chemically inert materials such as Cr. At this time, the inventors found that ethyl iodide as a material for laser etching is particularly advantageous over other materials of halogen- and hydrocarbon-based mixed gases in all aspects of corrosiveness, toxicity and flammability. In addition, the inventors first clearly demonstrated that the particle etch rate can be achieved by laser etching using pulsed light irradiation.
[35] The reaction mechanism of chromium etching can be considered as follows. Ethyl iodide gas is stable in air at room temperature, and iodide is liberated by applying light and heat to the ethyl iodide gas. The liberated iodide reacts with Cr, which includes a patterned film that produces chromium iodide. Chromium iodide has a low vapor pressure at room temperature and cannot vaporize into a gaseous state. However, the ethyl iodide gas adsorbed on the substrate before the laser beam irradiation is thermally decomposed by the instantaneous temperature rise caused by the irradiation of the pulsed laser beam for laser etching, while the iodide is Cr containing the substrate. In reaction to vaporize the chromium iodide gas into the gas phase. At the end of the pulsed laser beam, the gaseous chromium iodide is cooled to condense fine particles. By employing a configuration in which the surface to be processed is directed downward, the etching reaction proceeds according to a unique reaction mechanism in which the generated fine particles drop. The falling particles do not fall to the objective lens 4 located below, and are pressed to be taken into the inlet port 15 by a high speed horizontal gas flow sucked into the inlet port, and the inlet port 15 is pressed into the source gas ejection nozzle ( It is positioned in the ejection direction of 14 and opposite the nozzle 14. As mentioned above, the selected source gases, reaction mechanisms and approved etching reactions have not been studied for laser processing techniques, and the inventors clearly for the first time find that they can obtain useful methods and apparatus for laser processing of Cr masks. Explained.
[36] Fig. 2 shows the arrangement of the inlet port and the source gas ejection nozzle in the gas receiving portion of the present invention as viewed from the substrate side opening shape.
[37] In this configuration, the source gas is provided from a source gas ejection nozzle 14 located to the right of the laser beam irradiation portion 18 shown by the crosshair, the source gas being provided on the left side of the laser beam irradiation portion. It is immediately sucked into the inlet port 15 consisting of a crescent-shaped opening. On the other hand, the widths W1 and W2 of the purge gas jet port 13 are different in size, and the difference in size is such that the amount of purge gas provided from the jet port portion adjacent to the inlet port 15 differs from the jet port on the opposite side. It is designed to be three times more than what is provided from the part.
[38] In the gap portion between the gas receiver and the substrate, separate paths through which the source gas and purge gas flow in the horizontal plane are directed to the direction 16 of the source gas flow (white arrow) and the direction of the purge gas flow 17 (black arrow). As shown. The source gas concentration can be higher between the source gas ejection nozzle 14 and the inlet port 15, and the velocity and concentration of the flow of the source gas in the laser beam irradiation portion 18 is reduced from the source gas ejection nozzle 14. The arrangement and shape of each opening is configured to be optimized by adjusting the ejection amount of. On the other hand, the flow of purge gas jet from the outside to the inside can prevent the source gas from leaking to the outside of the gas storage part 3. Since the amount of purge gas jet is increased in the jet port portion adjacent to the inlet port 15, even if the jet of the source gas is increased in the laser irradiation part and the flow rate is increased, the gas shielding effect is not destroyed. In addition, the flow of the purge gas to the outside of the gas accommodating portion prevents air from being mixed into the laser irradiation portion.
[39] Now, the quality of the calibration in chromium opacity defect correction by etching with ethyl iodide will be explained in detail in comparison with the quality of the calibration by the conventional vaporization method.
[40] A third harmonic light source of Nd: YAG laser (wavelength 335 nm, pulse width 20 ps, repetition frequency 1 kHz) was used as the laser source and the etching process flowed for 10 minutes at 10 sccm (standard cubic centimeter per minute: 1 atmosphere). One flow rate (cc)) of the source gas, wherein the source gas is a gas containing an ethyl iodide concentration of 0.5% with argon gas used as the carrier gas, and the purge gas containing nitrogen gas is 20 It is supplied at a flow rate of liters / second and is aspirated at a flow rate of 10 liters / second.
[41] The objective lens used was a high resolution ultraviolet lens with an operating range of 2 mm and NA = 0.8. The purge gas jet port 13 has an outer diameter of 20 mm, a wide jet port width W1 = 6 mm, and a narrow jet port width W2 = 2 mm, thus providing a threefold difference between the widest and narrowest portions of the opening. Have In addition, the diameter of the source gas ejection nozzle shown in FIG. 2 was 0.5 mm, and the size of the crescent inlet port 15 was set at a short axis a of 3 mm and a long axis b of 8 mm.
[42] The processing characteristics are as follows. Using the size of the laser irradiation of 1 μm ² , the etching method according to the present invention was compared with the general vaporization method, and in the method of the present invention, the etching reaction was performed with the laser intensity of 30% to 80% of the processing threshold of laser intensity in the vaporization method. Occurred in When the laser intensity was 60% of the processing boundary of the vaporization method, three minutes were required for processing of 1 μm ² , and the damage in the quartz substrate under the Cr pattern was not deeper than 2 nm, which is a limitation of the sensitivity of the measuring device.
[43] On the other hand, in the case of laser vaporization, the damage depth was about 10 nm even when the irradiation intensity was optimized. Also, in laser vaporization, a high bump of about 100 nm was observed on the Cr pattern at the edge of the processed portion. However, no bump was observed when the etching reaction of ethyl iodide was used. In addition, the reaction product produced by laser processing did not adhere on the substrate around the processed portions. When the flow rate of the source gas jet from the source gas jet nozzle 14 was less than 5 sccm, a small amount of reaction product was observed deposited on the objective lens 4, but when the flow rate was 5 sccm or more, the reaction product was deposited. Was not found.
[44] In the above, the use of ethyl iodide as the etching gas has been described, but a gas which replaces the halogen element with bromine (Br) and chlorine (Cl) is also effective. In addition, the hydrocarbon group is not limited to the ethyl group, and the methyl group and the propane group are effective. That is, the etching gases that can be used in the present invention are halogenated hydrocarbons represented in the form of CnHm-R (R is a halogen group, n is a positive integer 1, 2 or 3, m is a positive integer 3, 5 or 7). Can be.
[45] Next, when chromium carbonyl for use in laser CVD was applied as the source gas of the present invention, the gas shielding effect was examined in correcting the transparent defect. That is, the gas shielding effect is compared between the conventional type of the structure having a double concentric structure in which the inner concentric circle constitutes the inlet port and the outer concentric circle constitutes the purge gas blowing port, and the structure of the gas accommodating portion in the above embodiment of the present invention. It became. the results are as follow.
[46] When the gap distance between the gas accommodating part and the substrate was 0.5 mm and the flow rate of the purge gas and the suction flow rate were 20 liters / minute and 10 liters / minute, respectively, the amount ejected from the source gas ejection nozzle 14 changed from 5 sccm to 100 sccm. It became. In the conventional type of concentric gas receiver, the amount of blowout exceeded 50 sccm, and leakage of source gas around the gas receiver and mixing of air in the laser irradiation part were observed. In the case of the gas window structure of the present invention, even when the amount of source gas ejection was 100 sccm, no leakage of the source gas and mixing of air in the laser irradiation portion were observed.
[47] In addition, when the flow rate of the source gas was set to 30 sccm, the gap distance between the gas accommodating part 3 and the substrate 1 was changed, so that leakage of the source gas was compared in the two structures. In the conventional structure, leakage was found when the gap distance was 0.6 mm or more. On the other hand, no leak was found in the gas storage portion of the present invention until the gap was 1.5 mm. The ability to allow wider gaps is very effective in preventing accidents caused by collisions between the substrate 1 and the gas receiver 3.
[48] By providing this gas window and injecting the CVD source gas, effective correction of the transparent defects was also performed in laser CVD.
[49] Further, in the above experiment, the case where the gas blowing amount from the purge gas blowing port 13 differs three times between the opening portion closest to the inlet port 15 and the opening portion farthest from the inlet port will be described. It became. However, when the difference in gas ejection amount changed in the range of 1.5 times to 3.5 times, the effective gas shielding effect could be maintained.
[50] In addition, in the first embodiment of the present invention described above, the case where the reaction of laser etching and the reaction of laser CVD are performed separately is described. The source gas supply unit is configured to supply both a source gas for CVD and a source gas for etching, so that the etching method can be switched by switching between gases depending on the type of defect to be corrected. In this case, since all the processing processes of film-forming and film-removing are possible with one apparatus, this allows the total work throughput required to be calibrated at high speed, thus providing the advantage of higher practicality.
[51] Next, as a second embodiment of the present invention, an apparatus for performing a film-forming reaction by laser CVD is shown in Fig. 3, in which the structure of the gas accommodating portion shown in Fig. 2 is used and the processed surface of the substrate is upward. Towards the laser beam is irradiated from above. In this case, there is an advantage that the substrate can be easily held in the X-Y positioning stage because the substrate has a surface to be processed, which is directed upward. Further, even when the speed of the flow of the source gas is higher than that of the conventional gas storage unit having the double concentric openings for the suction and the ejection of the purge gas in the laser irradiation portion, no leakage of the source gas to the peripheral portion occurs. As a result, the higher rate of flow of the source gas inhibits the adhesion of fine particles deposited on the peripheral region of the CVD film, improving the quality of the calibration.
[52] Also in this structure, it is possible to introduce laser etching using an etching gas containing a halogenated hydrocarbon described in the first embodiment, to fabricate an apparatus having both the functions of film deposition and film-removal.
[53] It is also possible to fabricate a laser processing apparatus having a further processing process of film-removal using conventionally known reactions of laser vaporization.
[54] Although the present invention has been described in any preferred embodiments, it is to be understood that the claimed subject matter of the invention is not limited to such specific embodiments. On the contrary, the claimed subject matter is intended to cover all alternatives, modifications, and equivalents that may be included within the spirit and scope of the following claims.
[55] According to the present invention, a laser processing method and a laser processing apparatus capable of correcting one or both of a transparent defect and an opaque defect are provided.

权利要求:
Claims (14)
[1" claim-type="Currently amended] A laser processing method for removing a predetermined portion on a substrate by irradiating the substrate with a laser beam in the atmosphere of the source gas,
The source gas is a gas comprising a halogenated hydrocarbon.
[2" claim-type="Currently amended] The method of claim 1, wherein the machined surface of the substrate is directed downward.
[3" claim-type="Currently amended] The method according to claim 1, wherein the halogenated hydrocarbon is a mixture formed by a combination of a halogen group of any one of iodide, chlorine and bromine, and a halogen group of any one of a methyl group, an ethyl group and a propane group.
[4" claim-type="Currently amended] The method of claim 1 wherein the substrate is a chrome mask substrate.
[5" claim-type="Currently amended] Laser processing apparatus for removing a predetermined portion on the substrate by irradiating the substrate with a laser beam in the atmosphere of the source gas,
A laser irradiation and observation system for performing optical observation and irradiation with the laser on the processed portion on the substrate held on the T-Y positioning stage;
A gas for forming a local atmosphere of a CVD source gas or a local atmosphere of an etch source gas having a small gap formed between a surface to be processed and a gas receiving portion not in contact with the surface to be processed on the substrate; With a storing department,
A source gas supply and exhaust unit for supplying the source gas to the gas containing portion and for exhausting the source gas from the gas containing portion,
The substrate has the surface to be processed facing downward,
The laser irradiation and observation optical system is arranged to perform the irradiation and the aesthetic observation by the laser beam to a predetermined portion on the substrate from below,
The gas receiving portion is symmetrically with the nozzle with respect to the nozzle for blowing the source gas onto the laser beam irradiation position of the portion to be processed on the substrate, and the laser irradiation portion positioned between the center and the nozzle in a horizontal plane. A crescent-type inlet port having a center of the aperture positioned therein, and an opening width varied such that the amount of purge gas ejected from the opening portion adjacent to the inlet port is greater than the amount of purge gas ejected from the opening portion adjacent to the nozzle And a donut-type purge gas ejection port having the same.
[6" claim-type="Currently amended] The method of claim 5, wherein the etching gas is a source gas containing a halogenated hydrocarbon formed by a combination of a halogen group of any one of iodide, chlorine and bromine, and a halogen group of any one of methyl, ethyl and propane groups. Laser processing device made.
[7" claim-type="Currently amended] The laser processing apparatus according to claim 5, wherein the substrate is a chrome mask substrate.
[8" claim-type="Currently amended] 6. The laser processing apparatus of claim 5, wherein the source gas supply and exhaust unit includes a mechanism for switching between the CVD source gas and the etch source gas depending on the type of defect to be corrected.
[9" claim-type="Currently amended] 6. The method of claim 5, wherein the amount of purge gas ejected from the portion of the purge gas ejection port adjacent to the inlet port is 1.5 to 3.5 times more than the amount of purge gas ejected from the portion of the purge gas ejection port adjacent to the nozzle. Laser processing device made.
[10" claim-type="Currently amended] Laser processing apparatus for removing a predetermined portion on the substrate by irradiating the substrate with a laser beam in the atmosphere of the source gas,
A laser irradiation and observation system for performing optical observation and irradiation with the laser on the processed portion on the substrate held on the T-Y positioning stage;
Number of gases for forming a local atmosphere of CVD source gas or a local atmosphere of etch source gas around the portion to be processed with a small gap formed between the surface to be processed and the gas storage portion not in contact with the surface to be processed on the substrate. Payment,
A source gas supply and exhaust unit for supplying the source gas to the gas containing portion and for exhausting the source gas from the gas containing portion,
The substrate has the surface to be processed facing upwards,
The laser irradiation and observation optical system is arranged to perform the irradiation and the aesthetic observation by the laser beam from above to a predetermined portion on the substrate,
The gas receiving portion has a nozzle for blowing the source gas on the laser beam irradiation position of the portion to be processed on the substrate, and an opening is symmetrical with the nozzle with respect to the laser irradiation portion positioned between the center and the nozzle in a horizontal plane. A crescent-type inlet port having a central portion of the opening positioned at the opening, and an opening changed such that the amount of purge gas ejected from the opening portion adjacent to the inlet port is greater than the amount of purge gas ejected from the opening portion adjacent to the nozzle. And a toroidal purge gas ejection port having widths.
[11" claim-type="Currently amended] The method of claim 10, wherein the etching gas is a source gas containing a halogenated hydrocarbon formed by a combination of a halogen group of any one of iodide, chlorine and bromine, and a halogen group of any one of methyl, ethyl and propane groups. Laser processing apparatus.
[12" claim-type="Currently amended] The laser processing apparatus according to claim 10, wherein the substrate is a chrome mask substrate.
[13" claim-type="Currently amended] 11. The apparatus of claim 10, wherein the source gas supply and exhaust unit comprises a mechanism for switching between the CVD source gas and the etch source gas depending on the type of defect to be corrected.
[14" claim-type="Currently amended] 11. The method of claim 10, wherein the amount of purge gas ejected from the portion of the purge gas ejection port adjacent to the inlet port is 1.5 to 3.5 times more than the amount of purge gas ejected from the portion of the purge gas ejection port adjacent to the nozzle. Laser processing device made.

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-05-22|Priority to JP2002148353A

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2002-05-22|Priority to JPJP-P-2002-00148353

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2003-05-21|Application filed by 닛본 덴끼 가부시끼가이샤

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2004-02-11|Publication of KR20040012454A

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2006-03-23|Application granted

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2006-03-23|Publication of KR100562818B1

优先权:

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申请号 | 申请日 | 专利标题

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JP2002148353A|JP3859543B2|2002-05-22|2002-05-22|Laser processing equipment|

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JPJP-P-2002-00148353|2002-05-22|